All MOSFET. IPT012N06N Datasheet

 

IPT012N06N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPT012N06N
   Marking Code: 012N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
   |Id|ⓘ - Maximum Drain Current: 313 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: HSOF-8

 IPT012N06N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPT012N06N Datasheet (PDF)

 ..1. Size:634K  infineon
 ipt012n06n.pdf

IPT012N06N IPT012N06N

IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

 6.1. Size:1178K  infineon
 ipt012n08n5.pdf

IPT012N06N IPT012N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

 9.1. Size:1186K  infineon
 ipt015n10n5.pdf

IPT012N06N IPT012N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 9.2. Size:674K  infineon
 ipt019n08n5.pdf

IPT012N06N IPT012N06N

IPT019N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product vali

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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