Справочник MOSFET. IPT012N06N

 

IPT012N06N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPT012N06N
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 214 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 313 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 1800 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
   Тип корпуса: HSOF-8
 

 Аналог (замена) для IPT012N06N

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPT012N06N Datasheet (PDF)

 ..1. Size:634K  infineon
ipt012n06n.pdfpdf_icon

IPT012N06N

IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

 6.1. Size:1178K  infineon
ipt012n08n5.pdfpdf_icon

IPT012N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

 9.1. Size:1186K  infineon
ipt015n10n5.pdfpdf_icon

IPT012N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 9.2. Size:674K  infineon
ipt019n08n5.pdfpdf_icon

IPT012N06N

IPT019N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product vali

Другие MOSFET... IPSA70R1K4P7S , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , 12N60 , IPT019N08N5 , IPT026N10N5 , IPT029N08N5 , IPT111N20NFD , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 .

History: AP75T10GP | PM516BZ | P5015BD

 

 
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