IPT012N06N datasheet, аналоги, основные параметры

Наименование производителя: IPT012N06N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 214 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 313 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 1800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm

Тип корпуса: HSOF-8

Аналог (замена) для IPT012N06N

- подборⓘ MOSFET транзистора по параметрам

 

IPT012N06N даташит

 ..1. Size:634K  infineon
 ipt012n06n.pdf pdf_icon

IPT012N06N

IPT012N06N MOSFET HSOF OptiMOSTM Power-Transistor, 60 V Features Tab 100% avalanche tested Superior thermal resistance N-channel 1 Qualified according to JEDEC1) for target applications 2 3 4 5 Pb-free lead plating; RoHS compliant 6 7 8 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applica

 6.1. Size:1178K  infineon
 ipt012n08n5.pdf pdf_icon

IPT012N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 80 V IPT012N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 80 V IPT012N08N5 HSOF 1 Description Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista

 9.1. Size:1186K  infineon
 ipt015n10n5.pdf pdf_icon

IPT012N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V IPT015N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V IPT015N10N5 HSOF 1 Description Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

 9.2. Size:674K  infineon
 ipt019n08n5.pdf pdf_icon

IPT012N06N

IPT019N08N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 80 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product vali

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IPSA70R1K4P7S, IPSA70R2K0CE, IPSA70R2K0P7S, IPSA70R450P7S, IPSA70R600CE, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S, STP75NF75, IPT019N08N5, IPT026N10N5, IPT029N08N5, IPT111N20NFD, IPT210N25NFD, IPT60R022S7, IPT60R028G7, IPT60R040S7