All MOSFET. IPT210N25NFD Datasheet

 

IPT210N25NFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPT210N25NFD
   Marking Code: 210N25NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: HSOF-8

 IPT210N25NFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPT210N25NFD Datasheet (PDF)

 ..1. Size:999K  infineon
 ipt210n25nfd.pdf

IPT210N25NFD IPT210N25NFD

IPT210N25NFDMOSFETHSOFOptiMOS3 Power-Transistor, 250 VFeaturesTab N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness1 Very low on-resistance R 2DS(on)345 175 C operating temperature678 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application H

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP2323GN-HF | CS2N70HP

 

 
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