All MOSFET. IPT210N25NFD Datasheet

 

IPT210N25NFD Datasheet and Replacement


   Type Designator: IPT210N25NFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: HSOF-8
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IPT210N25NFD Datasheet (PDF)

 ..1. Size:999K  infineon
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IPT210N25NFD

IPT210N25NFDMOSFETHSOFOptiMOS3 Power-Transistor, 250 VFeaturesTab N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness1 Very low on-resistance R 2DS(on)345 175 C operating temperature678 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application H

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History: CHM85A3PAGP | TK7P65W | SQ9407EY-T1 | SFFX054Z

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