STD6N10T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD6N10T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: DPAK
STD6N10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD6N10T4 Datasheet (PDF)
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Datasheet: STD3NA50T4 , STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , 10N60 , STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 .
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