IPU80R1K4P7 Datasheet. Specs and Replacement

Type Designator: IPU80R1K4P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

IPU80R1K4P7 substitution

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IPU80R1K4P7 datasheet

 ..1. Size:1228K  infineon
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IPU80R1K4P7

IPU80R1K4P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(... See More ⇒

 5.1. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPU80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

 5.2. Size:265K  inchange semiconductor
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IPU80R1K4P7

isc N-Channel MOSFET Transistor IPU80R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 (@V = 10V; I = 2.3A) GS D Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fast switching application. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 6.1. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

IPU80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

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Detailed specifications: IPT60R040S7, IPT60R050G7, IPT60R065S7, IPT60R102G7, IPT60R150G7, IPT65R033G7, IPT65R105G7, IPT65R195G7, IRF1010E, IPU80R2K0P7, IPU80R2K4P7, IPU80R600P7, IPU80R750P7, IPU95R450P7, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7

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