STD8N06T4 PDF Specs and Replacement
Type Designator: STD8N06T4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 8
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 75
nS
Cossⓘ -
Output Capacitance: 90
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
DPAK
-
MOSFET ⓘ Cross-Reference Search
STD8N06T4 PDF Specs
7.1. Size:341K st
std8n06.pdf 
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒
9.4. Size:299K st
std8n10.pdf
This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒
9.5. Size:1402K st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf
STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V ... See More ⇒
9.6. Size:826K st
std8nf25.pdf
STD8NF25 N-channel 250 V, 318 m , 8 A STripFET II Power MOSFET in DPAK package Datasheet production data Features RDS(on) Order code VDSS ID max. STD8NF25 250 V ... See More ⇒
9.8. Size:122K st
std8ns25.pdf
STD8NS25 N-CHANNEL 250V - 0.38 - 8A DPAK MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V ... See More ⇒
9.10. Size:1302K st
std8n80k5.pdf
STD8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 6 A 110 W TAB Worldwide best FOM (figure of merit) 3 Ultra low gate charge 1 100% avalanche tested DPAK Zener protected Applications Switching applications F... See More ⇒
9.11. Size:377K st
std8n60dm2.pdf
STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze... See More ⇒
Detailed specifications: STD4N25T4
, STD4NA40-1
, STD4NA40T4
, STD5N20-1
, STD5N20T4
, STD6N10-1
, STD6N10T4
, STD8N06-1
, AO3400
, STD8N10
, STD8N10-1
, STD8N10L
, STD8N10L-1
, STD8N10LT4
, STD8N10T4
, STE100N20
, STE150N10
.
Keywords - STD8N06T4 MOSFET specs
STD8N06T4 cross reference
STD8N06T4 equivalent finder
STD8N06T4 pdf lookup
STD8N06T4 substitution
STD8N06T4 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
