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STD8N06T4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STD8N06T4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для STD8N06T4

 

 

STD8N06T4 Datasheet (PDF)

 ..1. Size:341K  1
std8n06-1 std8n06t4.pdf

STD8N06T4
STD8N06T4

STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V

 7.1. Size:341K  st
std8n06.pdf

STD8N06T4
STD8N06T4

STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V

 9.1. Size:297K  1
std8n10-1 std8n10t4.pdf

STD8N06T4
STD8N06T4

 9.2. Size:590K  1
std8n10l std8n10l-1 std8n10lt4.pdf

STD8N06T4
STD8N06T4

 9.3. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf

STD8N06T4
STD8N06T4

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.4. Size:299K  st
std8n10.pdf

STD8N06T4
STD8N06T4

This datasheet has been downloaded from http://www.digchip.com at this page

 9.5. Size:1402K  st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf

STD8N06T4
STD8N06T4

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

 9.6. Size:826K  st
std8nf25.pdf

STD8N06T4
STD8N06T4

STD8NF25N-channel 250 V, 318 m, 8 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STD8NF25 250 V

 9.7. Size:726K  st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf

STD8N06T4
STD8N06T4

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

 9.8. Size:122K  st
std8ns25.pdf

STD8N06T4
STD8N06T4

STD8NS25N-CHANNEL 250V - 0.38 - 8A DPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD8NS25 250 V

 9.9. Size:1239K  st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf

STD8N06T4
STD8N06T4

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 9.10. Size:1302K  st
std8n80k5.pdf

STD8N06T4
STD8N06T4

STD8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTSTD8N80K5 800 V 0.95 6 A 110 WTAB Worldwide best FOM (figure of merit)3 Ultra low gate charge1 100% avalanche testedDPAK Zener protectedApplications Switching applicationsF

 9.11. Size:377K  st
std8n60dm2.pdf

STD8N06T4
STD8N06T4

STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

 9.12. Size:698K  st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf

STD8N06T4
STD8N06T4

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.13. Size:1298K  st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf

STD8N06T4
STD8N06T4

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 9.14. Size:700K  st
stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf

STD8N06T4
STD8N06T4

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

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