IPW60R125CFD7 PDF and Equivalents Search

 

IPW60R125CFD7 Specs and Replacement

Type Designator: IPW60R125CFD7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 28 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO247

IPW60R125CFD7 substitution

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IPW60R125CFD7 datasheet

 ..1. Size:1329K  infineon
 ipw60r125cfd7.pdf pdf_icon

IPW60R125CFD7

IPW60R125CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒

 4.1. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

IPW60R125CFD7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj... See More ⇒

 4.2. Size:672K  infineon
 ipw60r125cp.pdf pdf_icon

IPW60R125CFD7

IPW60R125CP C IMOS # A0 9 688DG9>CC6CI PG TO247 1 7!"% # 4= =;0.4,77C /0=4290/ 1 I8... See More ⇒

 4.3. Size:242K  inchange semiconductor
 ipw60r125c6.pdf pdf_icon

IPW60R125CFD7

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R125C6 IIPW60R125C6 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒

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Detailed specifications: IPU95R750P7 , IPW60R024CFD7 , IPW60R031CFD7 , IPW60R037CSFD , IPW60R040CFD7 , IPW60R045P7 , IPW60R090CFD7 , IPW60R105CFD7 , IRF1407 , IPW60R180P7 , IPW80R280P7 , IPW80R290C3A , IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 .

History: IPZA60R045P7 | IPZ40N04S5-5R4

Keywords - IPW60R125CFD7 MOSFET specs

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