All MOSFET. IPW60R125CFD7 Datasheet

 

IPW60R125CFD7 Datasheet and Replacement


   Type Designator: IPW60R125CFD7
   Marking Code: 60R125F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO247
 

 IPW60R125CFD7 substitution

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IPW60R125CFD7 Datasheet (PDF)

 ..1. Size:1329K  infineon
 ipw60r125cfd7.pdf pdf_icon

IPW60R125CFD7

IPW60R125CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 4.1. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

IPW60R125CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

 4.2. Size:672K  infineon
 ipw60r125cp.pdf pdf_icon

IPW60R125CFD7

IPW60R125CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 1 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8

 4.3. Size:242K  inchange semiconductor
 ipw60r125c6.pdf pdf_icon

IPW60R125CFD7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125C6IIPW60R125C6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

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Datasheet: IPU95R750P7 , IPW60R024CFD7 , IPW60R031CFD7 , IPW60R037CSFD , IPW60R040CFD7 , IPW60R045P7 , IPW60R090CFD7 , IPW60R105CFD7 , P0903BDG , IPW60R180P7 , IPW80R280P7 , IPW80R290C3A , IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 .

History: IRF820S | MCH3484

Keywords - IPW60R125CFD7 MOSFET datasheet

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