STD8N10 Datasheet. Specs and Replacement

Type Designator: STD8N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: DPAK

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STD8N10 datasheet

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STD8N10

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STD8N10

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STD8N10

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STD8N10

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

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Detailed specifications: STD4NA40-1, STD4NA40T4, STD5N20-1, STD5N20T4, STD6N10-1, STD6N10T4, STD8N06-1, STD8N06T4, AON6414A, STD8N10-1, STD8N10L, STD8N10L-1, STD8N10LT4, STD8N10T4, STE100N20, STE150N10, STE15N100

Keywords - STD8N10 MOSFET specs

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