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STD8N10 PDF Specs and Replacement


   Type Designator: STD8N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: DPAK
 

 STD8N10 substitution

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STD8N10 PDF Specs

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STD8N10

This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒

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STD8N10

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STD8N10

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

Detailed specifications: STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , STD8N06-1 , STD8N06T4 , IRFB4227 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 .

Keywords - STD8N10 MOSFET specs

 STD8N10 cross reference
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