All MOSFET. IPZA60R180P7 Datasheet

 

IPZA60R180P7 Datasheet and Replacement


   Type Designator: IPZA60R180P7
   Marking Code: 60R180P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247-4
 

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IPZA60R180P7 Datasheet (PDF)

 ..1. Size:1106K  infineon
 ipza60r180p7.pdf pdf_icon

IPZA60R180P7

IPZA60R180P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 6.1. Size:1096K  infineon
 ipza60r120p7.pdf pdf_icon

IPZA60R180P7

IPZA60R120P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 7.1. Size:1164K  infineon
 ipza60r080p7.pdf pdf_icon

IPZA60R180P7

IPZA60R080P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 7.2. Size:1153K  infineon
 ipza60r060p7.pdf pdf_icon

IPZA60R180P7

IPZA60R060P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

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