All MOSFET. IRF150P220 Datasheet

 

IRF150P220 Datasheet and Replacement


   Type Designator: IRF150P220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 556 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 203 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO247
 

 IRF150P220 substitution

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IRF150P220 Datasheet (PDF)

 ..1. Size:1140K  infineon
irf150p220.pdf pdf_icon

IRF150P220

IRF150P220MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

 5.1. Size:1109K  infineon
irf150p221.pdf pdf_icon

IRF150P220

IRF150P221MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

 8.1. Size:150K  international rectifier
irf150.pdf pdf_icon

IRF150P220

PD - 90337GREPETITIVE AVALANCHE AND dv/dt RATED IRF150HEXFETTRANSISTORS JANTX2N6764THRU-HOLE (TO-204AA/AE) JANTXV2N6764[REF:MIL-PRF-19500/543]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF150 100V 0.055 38AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 8.2. Size:330K  international rectifier
irf1503lpbf irf1503spbf.pdf pdf_icon

IRF150P220

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

Datasheet: IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 , IQE006NE2LM5 , IQE006NE2LM5CG , IRF1310NLPBF , IRF135SA204 , MMIS60R580P , IRF150P221 , IRF200S234 , IRF3007LPBF , IRF300P226 , IRF3415LPBF , IRF3708LPBF , IRF40H233 , IRF520NSPBF .

History: STU309D

Keywords - IRF150P220 MOSFET datasheet

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