All MOSFET. IRF520NSPBF Datasheet

 

IRF520NSPBF Datasheet and Replacement


   Type Designator: IRF520NSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25(max) nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: D2PAK
 

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IRF520NSPBF Datasheet (PDF)

 ..1. Size:408K  international rectifier
 irf520nspbf irf520nlpbf.pdf pdf_icon

IRF520NSPBF

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

 6.1. Size:185K  international rectifier
 irf520ns.pdf pdf_icon

IRF520NSPBF

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

 6.2. Size:3746K  cn vbsemi
 irf520ns.pdf pdf_icon

IRF520NSPBF

IRF520NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

 6.3. Size:258K  inchange semiconductor
 irf520ns.pdf pdf_icon

IRF520NSPBF

Isc N-Channel MOSFET Transistor IRF520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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History: FDS7088N3

Keywords - IRF520NSPBF MOSFET datasheet

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