IRF520NSPBF - аналоги, параметры транзистора - Справочник транзисторов

IRF520NSPBF даташит

..1. Size:408K international rectifier
irf520nspbf irf520nlpbf.pdf pdf_icon

PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53

6.1. Size:185K international rectifier
irf520ns.pdf pdf_icon

PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

6.2. Size:3746K cn vbsemi
irf520ns.pdf pdf_icon

IRF520NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET

6.3. Size:258K inchange semiconductor
irf520ns.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

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