IRF6614PBF Datasheet and Replacement
Type Designator: IRF6614PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: DIRECTFET
- MOSFET Cross-Reference Search
IRF6614PBF Datasheet (PDF)
irf6614pbf irf6614trpbf.pdf

PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
irf6614.pdf

PD -96907BIRF6614DirectFET Power MOSFET Typical values (unless otherwise specified)l Application Specific MOSFETsVDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Low Profile (
irf6610.pdf

PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
irf6619.pdf

PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HGN210N12SL | MMBF5457 | 2N3797 | WMR05P04TS | IPD90N06S4-05 | STD52P3LLH6 | IRFU430AP
Keywords - IRF6614PBF MOSFET datasheet
IRF6614PBF cross reference
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History: HGN210N12SL | MMBF5457 | 2N3797 | WMR05P04TS | IPD90N06S4-05 | STD52P3LLH6 | IRFU430AP



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