IRF6614PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF6614PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 370 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0083 Ohm
Тип корпуса: DIRECTFET
Аналог (замена) для IRF6614PBF
IRF6614PBF Datasheet (PDF)
irf6614pbf irf6614trpbf.pdf
PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
irf6614.pdf
PD -96907BIRF6614DirectFET Power MOSFET Typical values (unless otherwise specified)l Application Specific MOSFETsVDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Low Profile (
irf6610.pdf
PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
irf6619.pdf
PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (
irf6612.pdf
PD - 95842IRF6612/IRF6612TR1HEXFET Power MOSFETVDSS RDS(on) max Qg(typ.)l Application Specific MOSFETs 30V 3.3m@VGS = 10V 30nC4.4m@VGS = 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6611.pdf
PD - 96978EIRF6611DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6613.pdf
PD - 95881BIRF6613HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for Synchronous Rectification in Isolated VDSS RDS(on) max Qg(typ.)DC-DC Converters3.4m@VGS = 10V40V 42nCl Low Conduction Losses4.1m@VGS = 4.5Vl Low Switching Lossesl Low Profile (
irf6616.pdf
PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6617.pdf
PD - 95847IRF6617HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses30V 8.1m@VGS = 10V 11nCl Low Switching Losses10.3m@VGS = 4.5Vl Low Profile (
irf6618.pdf
PD - 94726CIRF6618/IRF6618TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs30V 2.2m@VGS = 10V 43 nCl Ideal for CPU Core DC-DC Converters3.4m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6616pbf irf6616trpbf.pdf
PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6618pbf irf6618trpbf.pdf
PD - 97240AIRF6618PbFIRF6618TRPbFl RoHs Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs30V max 20V max 2.2m@ 10V 3.4m@ 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity43nC 15nC 4.0nC 46nC 28nC 1.64Vl
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918