STD8N10L-1 Datasheet. Specs and Replacement

Type Designator: STD8N10L-1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: IPAK

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STD8N10L-1 substitution

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STD8N10L-1 datasheet

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std8n10-1 std8n10t4.pdf pdf_icon

STD8N10L-1

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STD8N10L-1

This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒

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STD8N10L-1

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

Detailed specifications: STD5N20T4, STD6N10-1, STD6N10T4, STD8N06-1, STD8N06T4, STD8N10, STD8N10-1, STD8N10L, 10N60, STD8N10LT4, STD8N10T4, STE100N20, STE150N10, STE15N100, STE16N100, STE180N05, STE180N10

Keywords - STD8N10L-1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.