STD8N10L-1 Datasheet and Replacement
Type Designator: STD8N10L-1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33
Ohm
Package:
IPAK
- MOSFET Cross-Reference Search
STD8N10L-1 Datasheet (PDF)
7.2. Size:299K st
std8n10.pdf 
This datasheet has been downloaded from http://www.digchip.com at this page
9.1. Size:341K 1
std8n06-1 std8n06t4.pdf
STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V
9.3. Size:1402K st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf
STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V
9.4. Size:826K st
std8nf25.pdf
STD8NF25N-channel 250 V, 318 m, 8 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STD8NF25 250 V
9.5. Size:341K st
std8n06.pdf
STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V
9.6. Size:726K st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf
STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V
9.7. Size:122K st
std8ns25.pdf
STD8NS25N-CHANNEL 250V - 0.38 - 8A DPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD8NS25 250 V
9.8. Size:1239K st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf
STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V
9.9. Size:1302K st
std8n80k5.pdf
STD8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTSTD8N80K5 800 V 0.95 6 A 110 WTAB Worldwide best FOM (figure of merit)3 Ultra low gate charge1 100% avalanche testedDPAK Zener protectedApplications Switching applicationsF
9.10. Size:377K st
std8n60dm2.pdf
STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze
9.11. Size:698K st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf
STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V
9.12. Size:1298K st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf
STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V
9.13. Size:700K st
stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf
STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
History: HUF76619D3
| IXTQ82N25P
| P4506BD
| SSM6K403TU
| CHM4450JGP
| FDPF12N50T
| NCE20NP1006S
Keywords - STD8N10L-1 MOSFET datasheet
STD8N10L-1 cross reference
STD8N10L-1 equivalent finder
STD8N10L-1 lookup
STD8N10L-1 substitution
STD8N10L-1 replacement
