IRF6797MPBF Datasheet and Replacement
Type Designator: IRF6797MPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: DIRECTFET
IRF6797MPBF substitution
IRF6797MPBF Datasheet (PDF)
irf6797mpbf irf6797mtrpbf.pdf

PD - 97320AIRF6797MPbFIRF6797MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (
irf6795m.pdf

PD - 97321CIRF6795MPbFIRF6795MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 1.4m@ 10V 2.4m@ 4.5Vl Low Profile (
irf6798m.pdf

PD - 97433BIRF6798MPbFIRF6798MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 0.95m@ 10V 1.6m@ 4.5Vl Low Profile (
irf6794m.pdf

PD - 97457IRF6794MPbFIRF6794MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode25V max 20V max 1.3m@ 10V 2.3m@ 4.5Vl Low Profile (
Datasheet: IRF6648PBF , IRF6662PBF , IRF6665PBF , IRF6668PBF , IRF6674TRPBF , IRF6715MPBF , IRF6722MPBF , IRF6775MTRPBF , IRFP260N , IRF6893MPBF , IRF6898MTRPBF , IRF7101PBF , IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A .
Keywords - IRF6797MPBF MOSFET datasheet
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