STE150N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE150N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 320 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 3600(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: ISOTOP
STE150N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE150N10 Datasheet (PDF)
ste150n10.pdf
STE150N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE150N10 100 V
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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