All MOSFET. STE150N10 Datasheet

 

STE150N10 Datasheet and Replacement


   Type Designator: STE150N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 3600(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: ISOTOP
      - MOSFET Cross-Reference Search

 

STE150N10 Datasheet (PDF)

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STE150N10

STE150N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE150N10 100 V

 9.1. Size:64K  1
 ste15na100.pdf pdf_icon

STE150N10

STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V

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STE150N10

 9.3. Size:80K  st
 ste15na100.pdf pdf_icon

STE150N10

STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V

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Datasheet: STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STP75NF75 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 .

History: MCH3484 | DMN30H4D0L

Keywords - STE150N10 MOSFET datasheet

 STE150N10 cross reference
 STE150N10 equivalent finder
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