STE150N10 Datasheet and Replacement
Type Designator: STE150N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 3600(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: ISOTOP
STE150N10 substitution
STE150N10 Datasheet (PDF)
ste150n10.pdf
STE150N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE150N10 100 V
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
Datasheet: STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , IRF630 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 .
Keywords - STE150N10 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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