JSM4953 Datasheet and Replacement
Type Designator: JSM4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
JSM4953 Datasheet (PDF)
jsm4953.pdf

JSM4953Dual P-Channel -30V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOP-8 D2D20.059@-10V.D1-30V -5.3A D10.089@-4.5VG2GS2G1 SSS1SO-8 SPin 1Equivalent Cir cuitD1 D2 General FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageG1 G2 S1 S2 MARKINGAPPLICATIONLoad Switch for Portable Devices4953DC/DC Conv
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SIHFP244 | MMBF5457 | 2N3797 | SIHFI614G | IPD90N06S4-05 | HGN190N15S | TPB70R600M
Keywords - JSM4953 MOSFET datasheet
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History: SIHFP244 | MMBF5457 | 2N3797 | SIHFI614G | IPD90N06S4-05 | HGN190N15S | TPB70R600M



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