ME08N20 PDF and Equivalents Search

 

ME08N20 Specs and Replacement

Type Designator: ME08N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.2 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO252

ME08N20 substitution

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ME08N20 datasheet

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 me08n20 me08n20-g.pdf pdf_icon

ME08N20

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME08N20 is the N-Channel logic enhancement mode power RDS(ON) 0.4 @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resist... See More ⇒

Detailed specifications: JSM9435 , G2302 , KI2301 , K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , ME04N25-G , STP80NF70 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 .

Keywords - ME08N20 MOSFET specs

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