All MOSFET. ME08N20 Datasheet

 

ME08N20 Datasheet and Replacement


   Type Designator: ME08N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.2 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO252
 

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ME08N20 Datasheet (PDF)

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 me08n20 me08n20-g.pdf pdf_icon

ME08N20

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME08N20 is the N-Channel logic enhancement mode power RDS(ON)0.4@VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resist

Datasheet: JSM9435 , G2302 , KI2301 , K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , ME04N25-G , 20N50 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 .

History: STB16PF06LT4 | JFFC7N65E | STFW3N150 | IRFU3710ZPBF | IRFH8303PBF | SGO100N08L | IRF7751G

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