All MOSFET. ME110N10F Datasheet

 

ME110N10F MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME110N10F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 943 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220F

 ME110N10F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME110N10F Datasheet (PDF)

 ..1. Size:705K  matsuki electric
 me110n10t me110n10f.pdf

ME110N10F ME110N10F

ME110N10T/ME110N10FN-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.2m@VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MDP6N60TH | IRFAE40 | IRFU3709

 

 
Back to Top