All MOSFET. ME110N10F Datasheet

 

ME110N10F Datasheet and Replacement


   Type Designator: ME110N10F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 943 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220F
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ME110N10F Datasheet (PDF)

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ME110N10F

ME110N10T/ME110N10FN-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.2m@VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SFW024N100C3 | ELM13401CA | 12N65KG-TF1-T | ME55N06A | R5016ANJ | DH150N12B | BSB280N15NZ3G

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