ME12N15-G MOSFET Datasheet: N-Ch, 150V, 13.6A. Full specification with pinout and replacement list

ME12N15-G Specs and Replacement

Type Designator: ME12N15-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.2 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO252

ME12N15-G substitution

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ME12N15-G datasheet

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ME12N15 / ME12N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 150m @VGS=10V The ME12N15 is the N-Channel logic enhancement mode power RDS(ON) 250m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially... See More ⇒

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ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12N04 is the N-Channel logic enhancement mode power RDS(ON)=28m @VGS=10V (N-Ch) field effect transistors are produced using high cell density, DMOS RDS(ON)=52m @VGS=4.5V (N-Ch) trench technology. This high density process is especially tailored to Super high density cell design for extrem... See More ⇒

9.2. Size:1537K cn vbsemi
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ME12N04 www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ABSO... See More ⇒

Detailed specifications: ME10N15-G, ME110N10T, ME110N10F, ME120N10T, ME120N10T-G, ME12N04, ME12N04-G, ME12N15, RFP50N06, ME12P04, ME12P04-G, ME15N10-G, ME20N03, ME20N03-G, ME20N15, ME20N15-G, ME20P03