ME12N15-G - аналоги, параметры транзистора - Справочник транзисторов

ME12N15-G даташит

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ME12N15 / ME12N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 150m @VGS=10V The ME12N15 is the N-Channel logic enhancement mode power RDS(ON) 250m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

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ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12N04 is the N-Channel logic enhancement mode power RDS(ON)=28m @VGS=10V (N-Ch) field effect transistors are produced using high cell density, DMOS RDS(ON)=52m @VGS=4.5V (N-Ch) trench technology. This high density process is especially tailored to Super high density cell design for extrem

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ME12N04 www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ABSO

Другие MOSFET... ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , RFP50N06 , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G , ME20P03 .