IRF7324PBF PDF and Equivalents Search

 ..1. Size:164K  international rectifier
 irf7324pbf.pdf

PD - 95460 IRF7324PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒

 0.1. Size:185K  international rectifier
 irf7324pbf-1.pdf

IRF7324TRPbF-1 HEXFET Power MOSFET VDS -20 V 1 8 RDS(on) max S1 D1 0.018 2 7 (@V = -4.5V) GS G1 D1 Qg (typical) 42 nC 3 6 S2 D2 ID 4 5 -9.0 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En... See More ⇒

 7.1. Size:99K  international rectifier
 irf7324.pdf

PD -93799A IRF7324 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒

 7.2. Size:134K  international rectifier
 irf7324d1pbf.pdf

PD-95309A IRF7324D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 l Ideal for Mobile Phone Applications A K l Generation V Technology 3 6 S D RDS(on) = 0.27 l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer ... See More ⇒

 7.3. Size:210K  international rectifier
 irf7324d1.pdf

PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal for Mobile Phone Applications A K Generation V Technology 3 6 S D RDS(on) = 0.18 SO-8 Footprint 4 5 G D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottk... See More ⇒

 7.4. Size:1183K  cn vbsemi
 irf7324tr.pdf

IRF7324TR www.VBsemi.tw Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒