IRF7379PBF MOSFET Datasheet: NP-Ch, 30V, 5.8A. Full specification with pinout and replacement list

IRF7379PBF Specs and Replacement

   Type Designator: IRF7379PBF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8

IRF7379PBF substitution

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IRF7379PBF datasheet

..1. Size:219K international rectifier
irf7379pbf.pdf pdf_icon

PD - 95300 IRF7379PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier... See More ⇒

7.1. Size:349K 1
auirf7379q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in... See More ⇒

7.2. Size:245K international rectifier
irf7379qpbf.pdf pdf_icon

PD - 96111 IRF7379QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 P-CHANNEL MOSFET l Automotive [Q101] Qualified RDS(on) 0.045 0.090 l Lead-Free To... See More ⇒

7.3. Size:215K international rectifier
irf7379.pdf pdf_icon

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced p... See More ⇒