IRF7580MTRPBF Datasheet. Specs and Replacement

Type Designator: IRF7580MTRPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 114 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: DIRECTFET

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IRF7580MTRPBF datasheet

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PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 A K and Schottky Diode VDSS = 30V 2 7 N-Channel HEXFET A K Low VF Schottky Rectifier 3 6 RDS(on) = 0.11 S D Generation 5 Technology 4 5 TM G D Micro8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schott... See More ⇒

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Detailed specifications: IRF7480MTRPBF, IRF7483MTRPBF, IRF7488PBF, IRF7503PBF, IRF7504PBF, IRF7506PBF, IRF7507PBF, IRF7509PBF, 50N06, IRF7749L1TRPBF, IRF7759L2PBF, IRF7779L2PBF, IRF7807ATRPBF-1, IRF7807TRPBF-1, IRF7807VTRPBF-1, IRF7946TRPBF, IRF8010LPBF

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