STE250N05 Datasheet and Replacement
Type Designator: STE250N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 10000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: ISOTOP
STE250N05 substitution
STE250N05 Datasheet (PDF)
ste250n06.pdf
STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V
ste250ns10.pdf
STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V
Datasheet: STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , 12N60 , STE250N06 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 .
History: 2N6781 | STU435S | 2N6782LCC4
Keywords - STE250N05 MOSFET datasheet
STE250N05 cross reference
STE250N05 equivalent finder
STE250N05 lookup
STE250N05 substitution
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History: 2N6781 | STU435S | 2N6782LCC4
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