All MOSFET. STE250N06 Datasheet

 

STE250N06 Datasheet and Replacement


   Type Designator: STE250N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 475 nC
   tr ⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 10000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: ISOTOP
 

 STE250N06 substitution

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STE250N06 Datasheet (PDF)

 ..1. Size:330K  1
 ste250n06.pdf pdf_icon

STE250N06

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V

 6.1. Size:261K  1
 ste250n05.pdf pdf_icon

STE250N06

 7.1. Size:332K  st
 ste250ns10.pdf pdf_icon

STE250N06

STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - STE250N06 MOSFET datasheet

 STE250N06 cross reference
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