All MOSFET. STE250N06 Datasheet

 

STE250N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STE250N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 250 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 475 nC
   trⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 10000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: ISOTOP

 STE250N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE250N06 Datasheet (PDF)

 ..1. Size:330K  1
 ste250n06.pdf

STE250N06 STE250N06

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V

 6.1. Size:261K  1
 ste250n05.pdf

STE250N06 STE250N06

 7.1. Size:332K  st
 ste250ns10.pdf

STE250N06 STE250N06

STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V

Datasheet: STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , 12N60 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 .

 

 
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