STE250N06 Specs and Replacement
Type Designator: STE250N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 10000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: ISOTOP
STE250N06 substitution
- MOSFET ⓘ Cross-Reference Search
STE250N06 datasheet
ste250n06.pdf
STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE VDSS RDS(on) ID STE250N06 60 V ... See More ⇒
ste250ns10.pdf
STE250NS10 N-channel 100 V, 0.0045 , 220 A, ISOTOP STripFET Power MOSFET Features Type VDSS RDS(on) ID STE250NS10 100 V ... See More ⇒
Detailed specifications: STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , 2N7002 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 .
History: STH4N80FI | STP6NK90Z
Keywords - STE250N06 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STH4N80FI | STP6NK90Z
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