STE250N06 Datasheet and Replacement
Type Designator: STE250N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 250 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 10000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: ISOTOP
- MOSFET Cross-Reference Search
STE250N06 Datasheet (PDF)
ste250n06.pdf
STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V
ste250ns10.pdf
STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SWD4N70K2 | HGD095NE4SL | BLS6G3135S-20 | ZVN0124A | HFP640 | 4N70KG-TMS2-T | STP36N06LFI
Keywords - STE250N06 MOSFET datasheet
STE250N06 cross reference
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History: SWD4N70K2 | HGD095NE4SL | BLS6G3135S-20 | ZVN0124A | HFP640 | 4N70KG-TMS2-T | STP36N06LFI
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