All MOSFET. IRFB7530PBF Datasheet

 

IRFB7530PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB7530PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 295 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 274 nC
   trⓘ - Rise Time: 141 nS
   Cossⓘ - Output Capacitance: 1266 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-220AB

 IRFB7530PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB7530PBF Datasheet (PDF)

 ..1. Size:655K  infineon
 irfb7530pbf irfs7530pbf irfsl7530pbf.pdf

IRFB7530PBF IRFB7530PBF

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

 6.1. Size:655K  international rectifier
 irfb7530 irfs7530pbf irfsl7530pbf.pdf

IRFB7530PBF IRFB7530PBF

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

 6.2. Size:245K  inchange semiconductor
 irfb7530.pdf

IRFB7530PBF IRFB7530PBF

isc N-Channel MOSFET Transistor IRFB7530,IIRFB7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:656K  international rectifier
 irfb7534 irfs7534pbf irfsl7534pbf.pdf

IRFB7530PBF IRFB7530PBF

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A

 7.2. Size:654K  international rectifier
 irfb7537 irfs7537pbf irfsl7537pbf.pdf

IRFB7530PBF IRFB7530PBF

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

 7.3. Size:245K  inchange semiconductor
 irfb7537.pdf

IRFB7530PBF IRFB7530PBF

isc N-Channel MOSFET Transistor IRFB7537,IIRFB7537FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL

 7.4. Size:245K  inchange semiconductor
 irfb7534.pdf

IRFB7530PBF IRFB7530PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7534IIRFB7534FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: JANSR2N7399 | IXTH21N50

 

 
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