IRFB7530PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFB7530PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.7 V
Максимально допустимый постоянный ток стока |Id|: 295 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 274 nC
Время нарастания (tr): 141 ns
Выходная емкость (Cd): 1266 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.002 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRFB7530PBF
IRFB7530PBF Datasheet (PDF)
irfb7530pbf irfs7530pbf irfsl7530pbf.pdf
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A
irfb7530 irfs7530pbf irfsl7530pbf.pdf
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A
irfb7530.pdf
isc N-Channel MOSFET Transistor IRFB7530,IIRFB7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
irfb7534 irfs7534pbf irfsl7534pbf.pdf
StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A
irfb7537 irfs7537pbf irfsl7537pbf.pdf
StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup
irfb7537.pdf
isc N-Channel MOSFET Transistor IRFB7537,IIRFB7537FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
irfb7534.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7534IIRFB7534FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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