STE36N50 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STE36N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 410 nC
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 1800(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: ISOTOP

STE36N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS