STE36N50 Datasheet and Replacement
Type Designator: STE36N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 410 nC
tr ⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 1800(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: ISOTOP
STE36N50 substitution
STE36N50 Datasheet (PDF)
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf
TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2
ste36n50a.pdf
STE36N50AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE36N50A 500 V
Datasheet: STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26NA90 , 5N60 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 .
History: IRF7524D1 | IRF723 | ECH8309 | FSS23AOD
Keywords - STE36N50 MOSFET datasheet
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History: IRF7524D1 | IRF723 | ECH8309 | FSS23AOD
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