STE36N50-DA MOSFET. Datasheet pdf. Equivalent

   Type Designator: STE36N50-DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: ISOTOP

STE36N50-DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STE36N50-DA Datasheet (PDF)

..1. Size:25K 1
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf

TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2

6.1. Size:252K 1
ste36n50.pdf