All MOSFET. IRL80HS120 Datasheet

 

IRL80HS120 Datasheet and Replacement


   Type Designator: IRL80HS120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 11.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PQFN2X2
 

 IRL80HS120 substitution

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IRL80HS120 Datasheet (PDF)

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IRL80HS120

IRL80HS120 Typical values (unless otherwise specified) Target Applications Wireless charging V V R (max )DSS GS DS(on) . Adapter 80V min. 20V max 32m@ 10V Telecom Q Q V g tot gd gs(th)4.7nC 1.8nC 1.7V Benefits Top View Higher power density designs Higher switching frequency D 1 6 D Uses OptiMOSTM5 Chip Reduced parts count w

Datasheet: IRL2505LPBF , IRL2910LPBF , IRL40B209 , IRL40T209 , IRL530NPBF , IRL540NLPBF , IRL60HS118 , IRL60SC216 , MMD60R360PRH , IRLI530NPBF , IRLU9343-701PBF , ISP12DP06NM , ISP25DP06LM , ISP25DP06LMS , ISP25DP06NM , ISP75DP06LM , ISS17EP06LM .

History: STD17NF03L-1 | SWU6N80D | KU2307Q | IRFP4768 | SVTP209R7NP7 | TPN6R303NC | WML10N65C4

Keywords - IRL80HS120 MOSFET datasheet

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