IRLI530NPBF MOSFET Datasheet: N-Ch, 100V, 12A. Full specification with pinout and replacement list

IRLI530NPBF Specs and Replacement

Type Designator: IRLI530NPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220FP

IRLI530NPBF substitution

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IRLI530NPBF datasheet

..1. Size:498K infineon
irli530npbf.pdf pdf_icon

IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

..2. Size:2848K cn vbsemi
irli530npbf.pdf pdf_icon

IRLI530NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.086 f = 60 Hz) RoHS Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal R... See More ⇒

6.1. Size:144K international rectifier
irli530n.pdf pdf_icon

PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach... See More ⇒

7.1. Size:166K 1
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