IRLI530NPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLI530NPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34(max)
nC
trⓘ - Rise Time: 53
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-220FP
IRLI530NPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLI530NPBF
Datasheet (PDF)
..1. Size:498K infineon
irli530npbf.pdf 
IRLI530NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.10 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 12A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
..2. Size:2848K cn vbsemi
irli530npbf.pdf
IRLI530NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal R
6.1. Size:144K international rectifier
irli530n.pdf
PD - 9.1350BIRLI530NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.10 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach
7.2. Size:933K international rectifier
irli530g.pdf
PD - 95030IRLI530GPbF Lead-Free2/19/04Document Number: 91311 www.vishay.com1IRLI530GPbFDocument Number: 91311 www.vishay.com2IRLI530GPbFDocument Number: 91311 www.vishay.com3IRLI530GPbFDocument Number: 91311 www.vishay.com4IRLI530GPbFDocument Number: 91311 www.vishay.com5IRLI530GPbFDocument Number: 91311 www.vishay.com6IRLI530GPbFTO-220 Full-
7.3. Size:1533K vishay
irli530g sihli530g.pdf
IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14
7.4. Size:1535K vishay
irli530g irli530gpbf sihli530g.pdf
IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14
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