ISP25DP06NM MOSFET. Datasheet pdf. Equivalent
Type Designator: ISP25DP06NM
Marking Code: 25DP06NM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.8 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT223
ISP25DP06NM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISP25DP06NM Datasheet (PDF)
isp25dp06nm.pdf
ISP25DP06NMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial ApplicationsDrainPin 2
isp25dp06lms.pdf
ISP25DP06LMSMOSFETPG-SOT223-3OptiMOSTM Small Signal Transistor, -60 VFeatures P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified according to JEDEC StandardDrainPin 2GateTable 1 Key
isp25dp06lm.pdf
ISP25DP06LMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial Applications
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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