ISP25DP06NM Specs and Replacement
Type Designator: ISP25DP06NM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT223
ISP25DP06NM substitution
- MOSFET ⓘ Cross-Reference Search
ISP25DP06NM datasheet
isp25dp06nm.pdf
ISP25DP06NM MOSFET SOT-223-4 OptiMOSTM Small Signal Transistor, -60 V Features 4 P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level 1 Enhancement mode 2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications Drain Pin 2... See More ⇒
isp25dp06lms.pdf
ISP25DP06LMS MOSFET PG-SOT223-3 OptiMOSTM Small Signal Transistor, -60 V Features P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Drain Pin 2 Gate Table 1 Key... See More ⇒
isp25dp06lm.pdf
ISP25DP06LM MOSFET SOT-223-4 OptiMOSTM Small Signal Transistor, -60 V Features 4 P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level 1 Enhancement mode 2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications ... See More ⇒
Detailed specifications: IRL60HS118, IRL60SC216, IRL80HS120, IRLI530NPBF, IRLU9343-701PBF, ISP12DP06NM, ISP25DP06LM, ISP25DP06LMS, AO4468, ISP75DP06LM, ISS17EP06LM, ISZ019N03L5S, ISZ040N03L5IS, ISZ0501NLS, ISZ065N03L5S, ISZ0901NLS, SIHFP450A
Keywords - ISP25DP06NM MOSFET specs
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History: WMO10N100C2
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