STE40N55 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE40N55
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: ISOTOP
STE40N55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE40N55 Datasheet (PDF)
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