All MOSFET. STE40N55 Datasheet

 

STE40N55 Datasheet and Replacement


   Type Designator: STE40N55
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ISOTOP
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STE40N55 Datasheet (PDF)

 8.1. Size:48K  1
 ste40na60.pdf pdf_icon

STE40N55

STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V

 8.2. Size:273K  st
 ste40nc60.pdf pdf_icon

STE40N55

STE40NC60N-CHANNEL 600V - 0.098 - 40A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE40NC60 600V

 8.3. Size:311K  st
 ste40nk90zd.pdf pdf_icon

STE40N55

STE40NK90ZDN-channel 900V - 0.14 - 40A ISOTOPSuper FREDmesh MOSFETGeneral featuresType VDSS RDS(on) ID PwSTE40NK90ZD 900V

 8.4. Size:97K  st
 ste40na60.pdf pdf_icon

STE40N55

STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

Keywords - STE40N55 MOSFET datasheet

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