All MOSFET. ISS17EP06LM Datasheet

 

ISS17EP06LM Datasheet and Replacement


   Type Designator: ISS17EP06LM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SOT23
 

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ISS17EP06LM Datasheet (PDF)

 ..1. Size:1142K  infineon
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ISS17EP06LM

ISS17EP06LMMOSFETSOT-23OptiMOSTM Small Signal Transistor, -60 V3Features P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level1 Enhancement mode Pb-free lead plating; RoHS compliant2 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDra

Datasheet: IRL80HS120 , IRLI530NPBF , IRLU9343-701PBF , ISP12DP06NM , ISP25DP06LM , ISP25DP06LMS , ISP25DP06NM , ISP75DP06LM , IRFZ44N , ISZ019N03L5S , ISZ040N03L5IS , ISZ0501NLS , ISZ065N03L5S , ISZ0901NLS , SIHFP450A , SIHFP450LC , SIHFP460LC .

History: STB13NM50N

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