ISS17EP06LM MOSFET. Datasheet pdf. Equivalent
Type Designator: ISS17EP06LM
Marking Code: DL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.79 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: SOT23
ISS17EP06LM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISS17EP06LM Datasheet (PDF)
..1. Size:1142K infineon
iss17ep06lm.pdf
iss17ep06lm.pdf
ISS17EP06LMMOSFETSOT-23OptiMOSTM Small Signal Transistor, -60 V3Features P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level1 Enhancement mode Pb-free lead plating; RoHS compliant2 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDra
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