ISS17EP06LM PDF and Equivalents Search

 

ISS17EP06LM Specs and Replacement

Type Designator: ISS17EP06LM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SOT23

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ISS17EP06LM datasheet

 ..1. Size:1142K  infineon
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ISS17EP06LM

ISS17EP06LM MOSFET SOT-23 OptiMOSTM Small Signal Transistor, -60 V 3 Features P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level 1 Enhancement mode Pb-free lead plating; RoHS compliant 2 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Dra... See More ⇒

Detailed specifications: IRL80HS120, IRLI530NPBF, IRLU9343-701PBF, ISP12DP06NM, ISP25DP06LM, ISP25DP06LMS, ISP25DP06NM, ISP75DP06LM, IRFZ44N, ISZ019N03L5S, ISZ040N03L5IS, ISZ0501NLS, ISZ065N03L5S, ISZ0901NLS, SIHFP450A, SIHFP450LC, SIHFP460LC

Keywords - ISS17EP06LM MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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