All MOSFET. ISZ0501NLS Datasheet

 

ISZ0501NLS Datasheet and Replacement


   Type Designator: ISZ0501NLS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TSDSON-8FL
 

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ISZ0501NLS Datasheet (PDF)

 ..1. Size:908K  infineon
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ISZ0501NLS

ISZ0501NLSMOSFETTSDSON-8 FLOptiMOSTM 5 Power-MOSFET, 25 V(enlarged source interconnection)Features Optimized for charger applications Very Low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested N-channel Pb-free

Datasheet: ISP12DP06NM , ISP25DP06LM , ISP25DP06LMS , ISP25DP06NM , ISP75DP06LM , ISS17EP06LM , ISZ019N03L5S , ISZ040N03L5IS , IRF840 , ISZ065N03L5S , ISZ0901NLS , SIHFP450A , SIHFP450LC , SIHFP460LC , LPM2301B3F , LPM2302B3F , LPM3401 .

History: PHB96NQ03LT | IRF250B | 2SK315 | AP04N80I-HF | BLL1214-250 | CS4N70ARHD | CS4N65A8HD

Keywords - ISZ0501NLS MOSFET datasheet

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