LPM2302B3F MOSFET Datasheet: N-Ch, 20V, 3.5A. Full specification with pinout and replacement list

LPM2302B3F Specs and Replacement

Type Designator: LPM2302B3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 typ Ohm

Package: SOT23

LPM2302B3F substitution

- MOSFET ⓘ Cross-Reference Search

LPM2302B3F datasheet

..1. Size:238K lowpower
lpm2302b3f.pdf pdf_icon

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m (Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m (Typ.)@V =2.5V DS(ON) GS using high cell density, DMOS trench technology. Sup... See More ⇒

8.1. Size:229K lowpower
lpm2301b3f.pdf pdf_icon

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m (typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m (typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high... See More ⇒

Detailed specifications: ISZ040N03L5IS, ISZ0501NLS, ISZ065N03L5S, ISZ0901NLS, SIHFP450A, SIHFP450LC, SIHFP460LC, LPM2301B3F, IRF640, LPM3401, LPM3406B3F, LPM3400B3F, LPM3413, LPM4953, LPM8205B6F, LPM8205TSF, LPM9021QVF