All MOSFET. LPM2302B3F Datasheet

 

LPM2302B3F Datasheet and Replacement


   Type Designator: LPM2302B3F
   Marking Code: A2sHB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.2 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05(typ) Ohm
   Package: SOT23
 

 LPM2302B3F substitution

   - MOSFET ⓘ Cross-Reference Search

 

LPM2302B3F Datasheet (PDF)

 ..1. Size:238K  lowpower
 lpm2302b3f.pdf pdf_icon

LPM2302B3F

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m(Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m(Typ.)@V =2.5V DS(ON) GSusing high cell density, DMOS trench technology. Sup

 8.1. Size:229K  lowpower
 lpm2301b3f.pdf pdf_icon

LPM2302B3F

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TF2302A

Keywords - LPM2302B3F MOSFET datasheet

 LPM2302B3F cross reference
 LPM2302B3F equivalent finder
 LPM2302B3F lookup
 LPM2302B3F substitution
 LPM2302B3F replacement

 

 
Back to Top

 


 
.