All MOSFET. LPM2302B3F Datasheet

 

LPM2302B3F Datasheet and Replacement


   Type Designator: LPM2302B3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05(typ) Ohm
   Package: SOT23
 

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LPM2302B3F Datasheet (PDF)

 ..1. Size:238K  lowpower
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LPM2302B3F

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m(Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m(Typ.)@V =2.5V DS(ON) GSusing high cell density, DMOS trench technology. Sup

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LPM2302B3F

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high

Datasheet: ISZ040N03L5IS , ISZ0501NLS , ISZ065N03L5S , ISZ0901NLS , SIHFP450A , SIHFP450LC , SIHFP460LC , LPM2301B3F , IRFP460 , LPM3401 , LPM3406B3F , LPM3400B3F , LPM3413 , LPM4953 , LPM8205B6F , LPM8205TSF , LPM9021QVF .

History: LPM3413 | IRF730SPBF | AP04N70BP-A | BLF7G27L-140 | 2SK2193 | BLF7G24L-140 | BRCS3404MC

Keywords - LPM2302B3F MOSFET datasheet

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