LPM8205TSF Datasheet and Replacement
Type Designator: LPM8205TSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TSSOP-8
LPM8205TSF substitution
LPM8205TSF Datasheet (PDF)
lpm8205b6f lpm8205tsf.pdf

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e
Datasheet: LPM2301B3F , LPM2302B3F , LPM3401 , LPM3406B3F , LPM3400B3F , LPM3413 , LPM4953 , LPM8205B6F , AON6414A , LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A , LPM9042 .
History: IPG20N06S2L-65 | SML4065GN | TK70A06J1 | PSMN6R5-80BS | FDD86250_F085 | WMB52N03T2 | HFP75N80C
Keywords - LPM8205TSF MOSFET datasheet
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History: IPG20N06S2L-65 | SML4065GN | TK70A06J1 | PSMN6R5-80BS | FDD86250_F085 | WMB52N03T2 | HFP75N80C



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