All MOSFET. LPM8205TSF Datasheet

 

LPM8205TSF MOSFET. Datasheet pdf. Equivalent


   Type Designator: LPM8205TSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TSSOP-8

 LPM8205TSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LPM8205TSF Datasheet (PDF)

 ..1. Size:1172K  lowpower
 lpm8205b6f lpm8205tsf.pdf

LPM8205TSF LPM8205TSF

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e

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