All MOSFET. LPM9029C Datasheet

 

LPM9029C Datasheet and Replacement


   Type Designator: LPM9029C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
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LPM9029C Datasheet (PDF)

 ..1. Size:338K  lowpower
lpm9029c.pdf pdf_icon

LPM9029C

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS: trench technology and design to provide excellent V =20V, I =12A NDS NDR with low gate charge. This device is suitable R

 8.1. Size:921K  lowpower
lpm9021qvf.pdf pdf_icon

LPM9029C

Preliminary Datasheet LPM9021 Single P-Channel, -12V, -6.5A, Power MOSFET General Description Features The LPM9021 is P-Channel enhancement MOSFET Trench Technology Effect Transistor. It uses advanced trench technology Super high density cell design and design to provide excellent RDS (ON) with low Excellent ON resistance for higher DC current Extremely Low Threshold

 9.1. Size:1215K  lowpower
lpm9031sof lpm9031qvf.pdf pdf_icon

LPM9029C

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFEGeneral Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e

 9.2. Size:1057K  lowpower
lpm9042.pdf pdf_icon

LPM9029C

Preliminary Datasheet LPM9042 Dual channel 40V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9042 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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