LPM9029C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LPM9029C
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: SOP8
- подбор MOSFET транзистора по параметрам
LPM9029C Datasheet (PDF)
lpm9029c.pdf

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS: trench technology and design to provide excellent V =20V, I =12A NDS NDR with low gate charge. This device is suitable R
lpm9021qvf.pdf

Preliminary Datasheet LPM9021 Single P-Channel, -12V, -6.5A, Power MOSFET General Description Features The LPM9021 is P-Channel enhancement MOSFET Trench Technology Effect Transistor. It uses advanced trench technology Super high density cell design and design to provide excellent RDS (ON) with low Excellent ON resistance for higher DC current Extremely Low Threshold
lpm9031sof lpm9031qvf.pdf

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFEGeneral Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e
lpm9042.pdf

Preliminary Datasheet LPM9042 Dual channel 40V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9042 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CET04N10 | DMP22M2UPS-13 | STD3N30T4 | H5N2004DS
History: CET04N10 | DMP22M2UPS-13 | STD3N30T4 | H5N2004DS



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