LPM9926SOF Datasheet and Replacement
Type Designator: LPM9926SOF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOP8
LPM9926SOF substitution
LPM9926SOF Datasheet (PDF)
lpm9926.pdf

Preliminary Datasheet LPM9926 20V Dual N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9926 uses advanced trench technology to provide excellent R , low gate charge and Green Device Available DS(ON)operation with gate voltages as low as 1.8V while Super Low Gate Charge retaining a 12V V rating. This device is suitable GS(MAX) Excelle
Datasheet: LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A , LPM9042 , LPM9435 , 7N65 , 2KJ7107DFN , 2KK5016 , AO6401-HF , FDC2512-HF , FDC3612-HF , KI2302 , KI2303 , KI2308DS .
History: WSK140N08 | JCS12N65ST | RFD12N06RLESM | SUB60N06-18 | IPD90N10S4L-06 | SI4862DY | HCFL65R130
Keywords - LPM9926SOF MOSFET datasheet
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History: WSK140N08 | JCS12N65ST | RFD12N06RLESM | SUB60N06-18 | IPD90N10S4L-06 | SI4862DY | HCFL65R130



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