All MOSFET. LPM9926SOF Datasheet

 

LPM9926SOF MOSFET. Datasheet pdf. Equivalent


   Type Designator: LPM9926SOF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOP8

 LPM9926SOF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LPM9926SOF Datasheet (PDF)

 7.1. Size:948K  lowpower
 lpm9926.pdf

LPM9926SOF LPM9926SOF

Preliminary Datasheet LPM9926 20V Dual N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9926 uses advanced trench technology to provide excellent R , low gate charge and Green Device Available DS(ON)operation with gate voltages as low as 1.8V while Super Low Gate Charge retaining a 12V V rating. This device is suitable GS(MAX) Excelle

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