STE53NA50 Datasheet and Replacement
Type Designator: STE53NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 92 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: ISOTOP
STE53NA50 substitution
STE53NA50 Datasheet (PDF)
ste53na50.pdf
STE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTE53NA50 500 V
ste53nc50.pdf
STE53NC50N-CHANNEL 500V - 0.070 - 53A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE53NC50 500V
Datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , RFP50N06 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .
History: IRF644S | IXFK72N20 | STE36N50-DA | MDF9N50BTH | SIHA22N60E
Keywords - STE53NA50 MOSFET datasheet
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History: IRF644S | IXFK72N20 | STE36N50-DA | MDF9N50BTH | SIHA22N60E
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