All MOSFET. STE53NA50 Datasheet

 

STE53NA50 Datasheet and Replacement


   Type Designator: STE53NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: ISOTOP
 

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STE53NA50 Datasheet (PDF)

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STE53NA50

STE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTE53NA50 500 V

 8.1. Size:278K  st
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STE53NA50

STE53NC50N-CHANNEL 500V - 0.070 - 53A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE53NC50 500V

Datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , 5N60 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .

Keywords - STE53NA50 MOSFET datasheet

 STE53NA50 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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