All MOSFET. ME2345A Datasheet

 

ME2345A Datasheet and Replacement


   Type Designator: ME2345A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOT-23
 

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ME2345A Datasheet (PDF)

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 me2345a me2345a-g.pdf pdf_icon

ME2345A

ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 80m@VGS=-4.5Vtechnology. This high density process is especially tailored to RDS(ON) 100m@VGS=-2.5Vminimize on-state res

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 me2345as me2345as-g.pdf pdf_icon

ME2345A

ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m@VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m@VGS=-2.5V minimize on-s

Datasheet: ME2325 , ME2325-G , ME2326A , ME2326A-G , ME2328 , ME2328-G , ME2333 , ME2333-G , 75N75 , ME2345A-G , ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 , ME2604-G , ME2612 .

History: BUK9C10-65BIT | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - ME2345A MOSFET datasheet

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