ME2345A MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2345A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SOT-23
ME2345A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2345A Datasheet (PDF)
me2345a me2345a-g.pdf
ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 80m@VGS=-4.5Vtechnology. This high density process is especially tailored to RDS(ON) 100m@VGS=-2.5Vminimize on-state res
me2345as me2345as-g.pdf
ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m@VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m@VGS=-2.5V minimize on-s
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
