ME2345A PDF and Equivalents Search

 

ME2345A Specs and Replacement

Type Designator: ME2345A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOT-23

ME2345A substitution

- MOSFET ⓘ Cross-Reference Search

 

ME2345A datasheet

 ..1. Size:1339K  matsuki electric
 me2345a me2345a-g.pdf pdf_icon

ME2345A

ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 80m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 100m @VGS=-2.5V minimize on-state res... See More ⇒

 0.1. Size:1253K  matsuki electric
 me2345as me2345as-g.pdf pdf_icon

ME2345A

ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m @VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m @VGS=-2.5V minimize on-s... See More ⇒

Detailed specifications: ME2325, ME2325-G, ME2326A, ME2326A-G, ME2328, ME2328-G, ME2333, ME2333-G, 18N50, ME2345A-G, ME25N06, ME25N06-G, ME2602, ME2602-G, ME2604, ME2604-G, ME2612

Keywords - ME2345A MOSFET specs

 ME2345A cross reference

 ME2345A equivalent finder

 ME2345A pdf lookup

 ME2345A substitution

 ME2345A replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.