ME2345A-G MOSFET Datasheet: P-Ch, 30V, 3.6A. Full specification with pinout and replacement list

ME2345A-G Specs and Replacement

Type Designator: ME2345A-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 70 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOT-23

ME2345A-G substitution

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ME2345A-G datasheet

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ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 80m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 100m @VGS=-2.5V minimize on-state res... See More ⇒

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me2345as me2345as-g.pdf pdf_icon

ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m @VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m @VGS=-2.5V minimize on-s... See More ⇒

Detailed specifications: ME2325-G , ME2326A , ME2326A-G , ME2328 , ME2328-G , ME2333 , ME2333-G , ME2345A , 20N50 , ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 , ME2604-G , ME2612 , ME2612-G .