ME25N06 MOSFET Datasheet: N-Ch, 60V, 16A. Full specification with pinout and replacement list

ME25N06 Specs and Replacement

Type Designator: ME25N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TO-252

ME25N06 substitution

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ME25N06 datasheet

..1. Size:1175K matsuki electric
me25n06 me25n06-g.pdf pdf_icon

ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 62m @VGS=10V The ME25N06 is the N-Channel logic enhancement mode power RDS(ON) 86m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored... See More ⇒

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me25n15al me25n15al-g.pdf pdf_icon

ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-r... See More ⇒

Detailed specifications: ME2326A, ME2326A-G, ME2328, ME2328-G, ME2333, ME2333-G, ME2345A, ME2345A-G, IRF520, ME25N06-G, ME2602, ME2602-G, ME2604, ME2604-G, ME2612, ME2612-G, ME2N7002D