ME25N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME25N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
Package: TO-252
ME25N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME25N06 Datasheet (PDF)
me25n06 me25n06-g.pdf
ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)62m@VGS=10VThe ME25N06 is the N-Channel logic enhancement mode power RDS(ON)86m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored
me25n15al me25n15al-g.pdf
ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r
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