ME2602-G MOSFET Datasheet: N-Ch, 100V, 4A. Full specification with pinout and replacement list

ME2602-G Specs and Replacement

Type Designator: ME2602-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-223

ME2602-G substitution

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ME2602-G datasheet

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ME2602/ME2602-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The ME2602 is the N-Channel logic enhancement mode power field RDS(ON) 115m @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta... See More ⇒

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ME2604/ME2604-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 1.7 @VGS=10V The ME2604 is the N-Channel logic enhancement mode power field RDS(ON) 1.9 @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially t... See More ⇒

9.2. Size:1289K matsuki electric
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ME2606/ME2606-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2606 is the N-Channel logic enhancement mode power field RDS(ON) 420m @VGS=10V effect transistors are produced using high cell density DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistan... See More ⇒

Detailed specifications: ME2328-G, ME2333, ME2333-G, ME2345A, ME2345A-G, ME25N06, ME25N06-G, ME2602, IRFZ24N, ME2604, ME2604-G, ME2612, ME2612-G, ME2N7002D, ME2N7002E, ME3205T, ME3205T-G