ME2N7002E MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2N7002E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.4 nC
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT-23
ME2N7002E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2N7002E Datasheet (PDF)
me2n7002e.pdf
ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc
me2n7002d.pdf
ME2N7002D N-Channel MOSFET ESD ProtectedGENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
