ME35N10-G MOSFET Datasheet: N-Ch, 100V, 28.1A. Full specification with pinout and replacement list

ME35N10-G Specs and Replacement

Type Designator: ME35N10-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 166 nS

Cossⓘ - Output Capacitance: 286 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-252

ME35N10-G substitution

- MOSFET ⓘ Cross-Reference Search

ME35N10-G datasheet

..1. Size:1166K matsuki electric
me35n10 me35n10-g.pdf pdf_icon

ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME35N10 is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 26m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD... See More ⇒

9.1. Size:1755K matsuki electric
me35n06 me35n06-g.pdf pdf_icon

ME35N06/ME35N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 32m @VGS=10V The ME35N06-G is the N-Channel logic enhancement mode power RDS(ON) 40m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: ME2N7002D, ME2N7002E, ME3205T, ME3205T-G, ME3587, ME35N06, ME35N06-G, ME35N10, IRLB3034, ME4174, ME4174-G, ME4411, ME4411-G, ME4413D, ME4413D-G, ME4435, ME4435-G